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(R)
VN02H
HIGH SIDE SMART POWER SOLID STATE RELAY
TYPE VN02H
s
V DSS 60 V
R DS(on ) 0.4
I OUT 6A
V CC 36 V
s s s s s
OUTPUT CURRENT (CONTINUOUS): 6A @ Tc=25oC 5V LOGIC LEVEL COMPATIBLE INPUT THERMAL SHUT-DOWN UNDER VOLTAGE SHUT-DOWN OPEN DRAIN DIAGNOSTIC OUTPUT VERY LOW STAND-BY POWER DISSIPATION
PENTAWATT (vertical)
PENTAWATT (horizontal)
DESCRIPTION The VN02H is a monolithic devices made using STMicroelectronics VIPower Technology, intended for driving resistive or inductive loads with one side grounded. Built-in thermal shut-down protects the chip from over temperature and short circuit. The input control is 5V logic level compatible. The open drain diagnostic output indicates open circuit (no load) and over temperature status. BLOCK DIAGRAM
PENTAWATT (in-line)
ORDER CODES: PENTAWATT vertical VN02H PENTAWATT horizontal VN02H(011Y) PENTAWATT in-line VN02H(012Y)
March 1999
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VN02H
ABSOLUTE MAXIMUM RATING
Symbol V (BR)DSS I OUT IR I IN VCC -V CC I STAT V ESD P tot Tj T stg Parameter Drain-Source Breakdown Voltage Output Current (cont.) Reverse Output Current Input Current Supply Voltage (for t = 400 ms) Reverse Supply Voltage Status Current Electrostatic Discharge (1.5 k, 100 pF) Power Dissipation at T c 25 C
o
Value 60 6 -6 10 60 -4 10 2000 28 -40 to 150 -55 to 150
Unit V A A mA V V mA V W
o o
Junction Operating Temperature Storage Temperature
C C
CONNECTION DIAGRAMS
CURRENT AND VOLTAGE CONVENTIONS
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VN02H
THERMAL DATA
R thj-case R thj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 4.4 60
o o
C/W C/W
ELECTRICAL CHARACTERISTICS (VCC = 9 to 36 V; -40 Tj 125 oC unless otherwise specified) POWER
Symbol VCC R on IS Parameter Supply Voltage On State Resistance Supply Current Test Conditions see note 1 I OUT = 3 A I OUT = 3 A Off State On State T j = 25 o C T j 25 C
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Min. 5
Typ.
Max. 36 0.8 0.4 50 20
Unit V A mA
SWITCHING
Symbol t d(on) tr t d(off) tf (di/dt) on (di/dt) off V demag Parameter Turn-on Delay Time Of Output Current Rise Time Of Output Current Turn-off Delay Time Of Output Current Fall Time Of Output Current Turn-on Current Slope Turn-off Current Slope Inductive Load Clamp Voltage Test Conditions I OUT = 3 A Resistive Load Input Rise Time < 0.1 s T j = 25 o C I OUT = 3 A Resistive Load Input Rise Time < 0.1 s T j = 25 o C I OUT = 3 A Resistive Load Input Rise Time < 0.1 s T j = 25 o C I OUT = 3 A Resistive Load Input Rise Time < 0.1 s T j = 25 o C I OUT = 3 A I OUT = IOV I OUT = 3 A I OUT = IOV I OUT = 3 A 25 T j 140 o C 25 T j 140 o C L = 1 mH Min. 5 5 5 2 0.05 0.1 -7 Typ. 10 15 15 6 0.15 0.4 -4 Max. 20 45 30 15 0.5 2 2 4 -2 Unit s s s s A/s A/s A/s A/s V
LOGIC INPUT
Symbol V IL VIH V I(hyst.) I IN V ICL Parameter Input Low Level Voltage Input High Level Voltage Input Hysteresis Voltage Input Current Input Clamp Voltage V IN = 5 V I IN = 10 mA I IN = -10 mA 5.5 2 0.5 250 6 -0.7 500 -0.3 Test Conditions Min. Typ. Max. 0.8 (*) Unit V V V A V V
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VN02H
ELECTRICAL CHARACTERISTICS (continued) PROTECTION AND DIAGNOSTICS
Symbol V STAT (*) V USD V SCL (*) t SC Parameter Status Voltage Output Low Under Voltage Shut Down Status Clamp Voltage Switch-off Time in Short Circuit Condition at Start-Up Over Current Average Current in Short Circuit Open Load Current Level Leakage Current Thermal Shut-down Temperature Reset Temperature I STAT = 10 mA I STAT = -10 mA R LOAD < 10 m T c = 25 o C R LOAD < 10 m R LOAD < 10 m T c = 85 o C 9 < VCC < 32 V Off State V OUT = 0 V 140 125 160 145 V CC = 13 V Test Conditions I STAT = 1.6 mA 2.5 5.5 6 -0.7 1.5 Min. Typ. Max. 0.4 5 Unit V V V V ms
-0.3 5
I OV I AV I OL I OUT T TSD TR
V CC = 13 V V CC = 13 V 5 0.9
28 1.8 70 60
A A mA A
o
C C
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(*) The VIH is internally clamped at 6V about. It is possible to connect this pin to an higher voltage via an external resistor calculated to not exceed 10 mA at the input pin. (*) Status determination > 100 s after the switching edge. Note 1 : Above VCC = 36 V the output voltage is clamped to 36 V. Power dissipation increases and the device turns off if junction temperature reaches thermal shutdown temperature.
FUNCTIONAL DESCRIPTION The device has a diagnostic output which indicates open circuit (no load) and over temperature conditions. The output signals are processed by internal logic. To protect the device against short circuit and over-current condition the thermal protection turns the integrated Power MOS off at a minimum junction temperature of 140 oC. When the temperature returns to about 125 oC the switch is automatically turned on again. To ensur the protection in all VCC conditions and in all the junction temperature range it is necessary to limit the voltage drop across Drain and Source (pin 3 and 5) at 29 V. The device is able to withstand a load dump according the test pulse 5 at level III of the ISO TR/1 7631. Above VCC = 36V the output voltage is clamped to 36V. Power dissipation increases and the device turns off if junction temperature reaches thermal shutdown temperature. PROTECTING THE DEVICE AGAINST REVERSE BATTERY The simplest way to protect the device against a continuous reverse battery voltage (-26V) is to
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insert a Schottky diode between pin 1 (GND) and ground, as shown in the typical application circuit (fig. 3). The consequences of the voltage drop across this diode are as follows:
- If the input is pulled to power GND, a negative
voltage of -VF is seen by the device. (VIL, VIH thresholds and VSTAT are increased by VF with respect to power GND).
- The undervoltage shutdown level is increased
by VF. If there is no need for the control unit to handle external analog signals referred to the power GND, the best approach is to connect the reference potential of the control unit to node [1] (see application circuit infig. 4), which becomes the common signal GND for the whole control board. In this way no shift of VIH, VIL and VSTAT takes place and no negative voltage appears on the INPUT pin; this solution allows the use of a standard diode, with a breakdown voltage able to handle any ISO normalized negative pulses that occours in the automotive environment.
VN02H
TRUTH TABLE
INPUT Normal Operation Open Circuit (No Load) Over-temperature Under-voltage L H L H L H L H OUTPUT L H L H L H L L DIAGNOSTIC H H H L H L H H
Figure 1: Waveforms
Figure 2: Over Current Test Circuit
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VN02H
Figure 3: Typical Application Circuit With A Schottky Diode For Reverse Supply Protection
Figure 4: Typical Application Circuit With Separate Signal Ground
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VN02H
PENTAWATT (VERTICAL) MECHANICAL DATA
DIM. A C D D1 E F F1 G G1 H2 H3 L L1 L2 L3 L5 L6 L7 M M1 Dia mm TYP. inch TYP.
MIN.
2.4 1.2 0.35 0.8 1 3.2 6.6 10.05
3.4 6.8
MAX. 4.8 1.37 2.8 1.35 0.55 1.05 1.4 3.6 7 10.4 10.4
MIN.
0.094 0.047 0.014 0.031 0.039 0.126 0.260 0.396
0.134 0.268
MAX. 0.189 0.054 0.110 0.053 0.022 0.041 0.055 0.142 0.276 0.409 0.409
17.85 15.75 21.4 22.5 2.6 15.1 6 4.5 4 3.65 3.85 0.144 3 15.8 6.6 0.102 0.594 0.236
0.703 0.620 0.843 0.886 0.118 0.622 0.260 0.177 0.157 0.152
P010E
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VN02H
PENTAWATT (HORIZONTAL) MECHANICAL DATA
DIM. MIN A C D E F G G1 H1 H2 H3 L2 L3 L5 L6 L7 V4 Diam. 3.65 10.05 14.60 3.50 2.60 15.10 6.00 90
o
mm TYP MAX 4.80 1.37 2.80 0.55 1.05 3.60 7.00 9.70 10.40 10.40 15.20 4.10 3.00 15.80 6.60 3.85 0.396 0.575 0.137 0.102 0.594 0.236 MIN 0.169 0.046 0.094 0.014 0.031 0.126 0.260 0.366 4.30 1.17 2.40 0.35 0.80 3.20 6.60 9.30
inch TYP MAX 0.189 0.054 0.110 0.021 0.041 0.142 0.275 0.382 0.409 0.409 0.598 0.161 0.118 0.622 0.260 90 0.144
o
0.151
PO1OL1_E
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VN02H
PENTAWATT (IN-LINE) MECHANICAL DATA
DIM. A C D E F F2 F3 G G1 H1 H2 H3 L2 L3 L4 L5 L6 L7 V4 Diam. mm TYP inch TYP
MIN 4.30 1.17 2.40 0.35 0.80 1.10 1.25 3.20 6.60 9.30 10.05 23.05 25.30 0.90 2.60 15.10 6.00
MAX 4.80 1.37 2.80 0.55 1.05 1.40 1.55 3.60 7.00 9.70 10.40 10.40 23.80 26.10 2.90 3.00 15.80 6.60 3.85
MIN 0.169 0.046 0.094 0.014 0.031 0.043 0.049 0.126 0.260 0.366 0.396 0.907 0.996 0.035 0.102 0.594 0.236
MAX 0.189 0.054 0.110 0.021 0.041 0.055 0.061 0.142 0.275 0.382 0.409 0.409 0.937 1.027 0.114 0.118 0.622 0.260 0.151
90o 3.65 0.144
90o
P010D
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VN02H
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics (c) 1999 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. http://www.st.com .
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